5G MMWAVE FRONT-ENDS IN SILICON
enabling 5G small cell densification & massive MIMO @ E-band
ABOUT US
The next generation 5G network will form the backbone of the fourth industrial revolution. We believe that by 2030 the planet will be blanketed by E-band connectivity. Existing E-band front-ends are bulky (~size of shoe-box), expensive (~$11k) and power hungry – and are not suited for small cell and massive MIMO.
Multifractal is addressing this problem by developing fully integrated E-band front-ends on a single chip, in silicon (CMOS / BiCMOS). Our front-end chips will make E-band front-ends so small (size of a match-box), and so cheap (~$20), that they will cover every lamp-post and every street corner!
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Multifractal's enabling technology is the ability to create high-Q E-band filters (and diplexers) on-chip in silicon and integrate them directly (still on chip) with the LNA, PA, switches and mixers, all in cheap mass producible silicon. Our customers can then feed the output of our IC directly into the digital back-end, reducing their front-end design, size, cost and effort. They do not have to worry about the RF – we do all that for them! This will enable miniaturization of the entire E-band front-end, for the first time allowing small cell and massive MIMO.
PRODUCT
E-TRX
A complete E-band transceiver on-chip in CMOS / BiCMOS
Cheap: < 20 USD
Low power: < 2 W
Mass producible: does not get better than this
Technical specifications (subject to change):
​TX<->RX: 71-76 / 81-86 GHz​​
Filter / diplexer on chip: 60 dB isolation, 15 dB return loss, < 0.5 dB ripple
Gain: 5-20 dB (tunable)
OP1dB (PA): 20 dBm
NF (LNA): 6 dB
TECHNOLOGY OVERVIEW
What differentiates us
FULLY TUNABLE, ACTIVELY ENHANCED, HIGH
Q-FACTOR E-BAND RESONATORS
First-ever E-band resonator with Q0 > 1000 in CMOS / BiCMOS
Based on STMicroelectronics BiCMOS055
Q0 of ≈ 1500
E-band [71-76 and 81-86 GHz]
Post-production tunable
COUPLED RESONATOR BANDPASS FILTERS
High-Q BPF in CMOS / BiCMOS
First narrowband on-chip mmWave BPF in CMOS / BiCMOS
E-Band 71-76 and 81 81-86 GHz
Out-of-band isolation of 60 dB
Available in a diplexer configuration
MM-WAVE LNA
State of the art LNA in CMOS / BiCMOS
Frequency range: 56-92 GHz
Gain: 13 dB
NF: < 7 dB
OUR SERVICES
TURNKEY SOLUTIONS
Turnkey mmWave IC development and manufacturing facilitation services.
DESIGN CUSTOMIZATION
Development of millimeter-wave silicon integrated circuits and electromagnetic analysis of on-chip microstructures.
LICENSING SOLUTIONS
We license some of our silicon-proven IP blocks that solve problems faced by MMIC designers.
OUR INVESTORS
OUR IN-KIND PARTNERS
Access to the silicon valley ecosystem
